Doped region structure and solar cell comprising the same, cell assembly, and photovoltaic system

ABSTRACT

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

CROSS-REFERENCE TO RELATED APPLICATIONS

Pursuant to 35 U.S.C. § 119 and the Paris Convention Treaty, thisapplication claims foreign priority to Chinese Patent Application No.202110828468.X filed Jul. 22, 2021, the contents of which, including anyintervening amendments thereto, are incorporated herein by reference.Inquiries from the public to applicants or assignees concerning thisdocument or the related applications should be directed to: MatthiasScholl P. C., Attn.: Dr. Matthias Scholl Esq., 245 First Street, 18thFloor, Cambridge, Mass. 02142.

BACKGROUND

The disclosure relates to the technical field of solar cells, and inparticular, to a doped region structure and a solar cell comprising thesame, a cell assembly, and a photovoltaic system.

Electricity generated by solar cells is a sustainable clean energysource. By virtue of a photovoltaic effect of a semiconductor p-njunction, sunlight can be converted into electric energy. Conversionefficiency is an important indicator of the performance of solar cells.In an interdigitated back contact (IBC) cell, a positive/negativeelectrode is designed on a back side of the cell, so that a frontsurface is not at all shielded by a metal gate line, thereby completelyeradicating an optical loss caused by the shielding of the metal gateline. In addition, a width of the electrode may be designed wider than aconventional electrode, so that a series resistance loss is reduced,thereby significantly improving the conversion efficiency. In addition,since the front side is designed with no electrodes, the products ismore esthetically pleasing and has many applications.

In a conventional passivated IBC cell with doped polysilicon, the dopedpolysilicon is isolated from a silicon substrate by a tunneling layer,forming a passivated contact structure in a stacked form of dopedpolysilicon-tunneling layer (an insulation layer)-silicon substrate. Athickness of the tunneling layer has a very large impact on a tunnelingresistance. In order to form a desirable resistivity, the thickness ofthe tunneling layer is required to be small enough. However, in order torealize a desirable passivation effect, the thickness of the tunnelinglayer is required to be large enough. Therefore, the thickness range ofthe tunneling layer is required to be strictly controlled. Duringproduction, the accuracy of the thickness of the tunneling layer isdifficult to control. Therefore, at present, production cannot be scaledup. In addition, requirements are also imposed for a thermal process ina follow-up production process. Therefore, the conversion efficiency ofthe cell is limited.

SUMMARY

Embodiments of the disclosure are intended to provide a doped regionstructure of a solar cell, to resolve the difficulty in production andthe limitation on conversion efficiency as a result of preciserequirements for a thickness of a conventional tunneling layer.

The embodiments of the disclosure are implemented as follows. A dopedregion structure of a solar cell includes

a first doped layer, a passivation layer, and a second doped layer thatare disposed on a silicon substrate in sequence.

The passivation layer is a porous structure comprising a hole region,and the first doped layer and/or the second doped layer are disposed inthe hole region.

Further, the first doped layer and the second doped layer have a samedoping polarity.

Further, a pore size of the porous structure is less than 20 μm.

Further, the pore size of the porous structure is less than 10 μm.

Further, the pore size of the porous structure is less than 1000 nm. Ahole is designed as a nano-level hole having a pore size less than 1000nm, and a surface hole density may be designed up to 10⁶-10⁸/cm². It maybe understood that the arrangement of nano-level hole having the poresize less than 1000 nm greatly reduces the overall contact area betweenthe second doped layer and the silicon substrate, thereby not onlyreducing the resistance, but also greatly reducing the recombination.

Further, a non-hole region of the porous structure includes a dopanthaving a same doping type as the first doped layer and/or the seconddoped layer.

Further, a part of the hole region of the porous structure includes thefirst doped layer and/or the second doped layer.

Further, a ratio of an area of the hole region of the porous structureto an entire area of the porous structure is less than 20%.

Further, a thickness of the passivation layer is in a range of 0.5-10nm.

Further, the thickness of the passivation layer is in a range of 0.8-2nm.

Further, the passivation layer is an oxide layer, a silicon carbidelayer, an amorphous silicon layer, or a combination thereof.

Further, the oxide layer comprises a silicon oxide layer, an aluminumoxide layer, or a combination thereof.

Further, the silicon carbide layer in the passivation layer includes ahydrogenated silicon carbide layer.

Further, a doping concentration of the first doped layer is between adoping concentration of the silicon substrate and a doping concentrationof the second doped layer.

Further, a junction depth of the first doped layer is less than 1.5 μm.

Further, the first doped layer is a monocrystalline silicon doped layerdoped with a group-III or group-V element.

Further, the second doped layer includes a polysilicon doped layer, asilicon carbide doped layer, or an amorphous silicon doped layer.

Further, the silicon carbide doped layer in the second doped layercomprises at least one silicon carbide doped film.

Further, the refractive indexes of the silicon carbide doped filmsdecrease from the silicon substrate toward outside.

Further, the silicon carbide doped layer in the second doped layerincludes a hydrogenated silicon carbide doped layer, a conductivity ofthe hydrogenated silicon carbide doped layer is greater than 0.01 S·cm,and a thickness of the hydrogenated silicon carbide doped layer isgreater than 10 nm.

Another embodiment of the disclosure is intended to provides a solarcell. The solar cell includes:

a silicon substrate;

a first doped region and a second doped region, alternately disposed ona back side of the silicon substrate and having opposite polarities;

a first dielectric layer, disposed on a front side of the siliconsubstrate;

a second dielectric layer, disposed between the first doped region andthe second doped region; and

a first conductive layer and a second conductive layer, respectivelydisposed in the first doped region and the second doped region.

The first doped region and/or the second doped region use(s) the dopedregion structure described above.

Further, one of the first doped region and the second doped region usesthe doped region structure described above, and the other of the firstdoped region and the second doped region is a third doped layer disposedon the back side of the silicon substrate.

Further, the third doped layer is a monocrystalline silicon doped layerdoped with a group-III or group-V element.

Further, grooves spaced apart are provided on the back side of thesilicon substrate, and the first doped region and the second dopedregion are alternately disposed in the grooves.

Further, grooves spaced apart are provided on the back side of thesilicon substrate, one of the first doped region and the second dopedregion is disposed in one of the grooves, and the other of the firstdoped region and the second doped region is disposed outside the groove.

Further, a trench is provided between the first doped region and thesecond doped region.

Further, the first doped region and/or the second doped region are/isdisposed in a part of regions inside and outside the groove.

Further, the first dielectric layer and the second dielectric layer eachare an aluminum oxide layer, a silicon nitride layer, a siliconoxynitride layer, a silicon carbide layer, an amorphous silicon layer, asilicon oxide layer, or a combination thereof.

Further, the first dielectric layer and/or the second dielectric layerinclude(s) the aluminum oxide layer and the silicon carbide layer, orthe silicon oxide layer and silicon carbide layer; and

a thickness of the first dielectric layer is greater than 50 nm, and athickness of the second dielectric layer is greater than 25 nm.

Further, a thickness of the aluminum oxide layer or the silicon oxidelayer in the first dielectric layer is less than 40 nm, a thickness ofthe aluminum oxide layer or the silicon oxide layer in the seconddielectric layer is less than 25 nm, and a thickness of the siliconcarbide layer in the first dielectric layer and/or in the seconddielectric layer is greater than 10 nm.

Further, the silicon carbide layer in the first dielectric layer and/orin the second dielectric layer comprises at least one silicon carbidefilm.

Further, the refractive indexes of the silicon carbide films decreasefrom the silicon substrate toward outside.

Further, a magnesium fluoride layer is further disposed outside thefirst dielectric layer and/or the second dielectric layer.

Further, the first conductive layer and the second conductive layer areTCO transparent conductive films and/or metal electrodes.

Further, the metal electrodes each include a silver electrode, a copperelectrode, an aluminum electrode, a tin-coated copper electrode, or asilver-coated copper electrode.

Further, the copper electrode is electroplated copper prepared by usingan electroplating process or the copper electrode prepared by means ofphysical vapor deposition.

Further, an electric field layer or a floating junction is disposedbetween the front side of the silicon substrate and the first dielectriclayer.

Further, one of the first doped region and the second doped region is aP-type doped region, the other of the first doped region and the seconddoped region is an N-type doped region, and a thickness of a passivationlayer in the P-type doped region is greater than a thickness of apassivation layer in the N-type doped region.

Further, one of the first doped region and the second doped region is aP-type doped region, the other of the first doped region and the seconddoped region is an N-type doped region, and a hole density of apassivation layer in the P-type doped region is greater than a holedensity of a passivation layer in the N-type doped region.

Another embodiment of the disclosure is intended to provides a solarcell. The solar cell includes:

a silicon substrate;

the doped region structure described above, disposed on a back side ofthe silicon substrate;

a third dielectric layer, disposed on the doped region structure;

a fourth doped layer and a fourth dielectric layer, disposed on a frontside of the silicon substrate in sequence; and

a third conductive layer and a fourth conductive layer, respectivelyelectrically connected to the doped region structure and the fourthdoped layer.

The doped region structure and the fourth doped layer have oppositepolarities.

Another embodiment of the disclosure is intended to provides a cellassembly. The cell assembly includes one of the solar cells describeabove.

Another embodiment of the disclosure is intended to provides aphotovoltaic system. The photovoltaic system includes the cell assemblydescribe above.

Another embodiment of the disclosure is intended to provides a cellassembly. The cell assembly includes another of the solar cells describeabove.

Another embodiment of the disclosure is intended to provides aphotovoltaic system. The photovoltaic system includes another of thecell assemblies describe above.

Different from the passivated contact structure in the prior art,according to the doped region structure of the solar cell provided inthe embodiments of the disclosure, the first doped layer, thepassivation layer, and the second doped layer are disposed in sequence,the passivation layer is arranged as a porous structure, and the holeregion has the first doped layer and/or the second doped layer.Therefore, a conductive channel is formed in the hole region of thepassivation layer, so that a desirable resistivity of the passivationlayer is formed. In this way, a thickness of the passivation layer has aless impact on the resistance, and the control requirements for thethickness of the passivation layer are lowered. Thus, more methods areapplicable to preparation of the passivation layer compared with theprior art. In an embodiment, the hole is designed as a nano-level holehaving a pore size less than 1000 nm, so that the surface hole densityis as high as 10⁶-10⁸/cm². It may be understood that the arrangement ofnano-level hole having the pore size less than 1000 nm greatly reducesthe overall contact area between the second doped layer and the siliconsubstrate, thereby not only reducing the resistance, but also greatlyreducing the recombination. The first doped layer is disposed betweenthe silicon substrate and the passivation layer to form a separationelectric field capable of enhancing surface electron holes, so that thefield passivation effect is enhanced. Since a Fermi level of the firstdoped layer is different from a Fermi level of the silicon substrate,the Fermi level of the first doped layer is changed. A solidconcentration of impurities (transition metals) is increased, so that anadditional impurity gettering effect is achieved. In addition, in theporous structure, the second doped layer is connected to the siliconsubstrate through the doped hole region and the first doped layer, sothat the overall resistance of the prepared cell is further reduced, andthe conversion efficiency of the cell is improved. In this way, thedifficulty in production and the limitation on the conversion efficiencyas a result of precise requirements for the thickness of theconventional tunneling layer are resolved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic structural diagram of a doped region structure ofa solar cell according to an embodiment of the disclosure.

FIG. 2 to FIG. 8 are schematic structural diagrams of a solar cellduring various implementation according to an embodiment of thedisclosure.

FIG. 9 is a schematic structural diagram of a solar cell according toanother embodiment of the disclosure.

DETAILED DESCRIPTION

To make the objectives, technical solutions and advantages of thedisclosure clearer and more comprehensible, the disclosure is furtherdescribed in detail below with reference to the accompanying drawingsand embodiments. It is to be understood that the specific embodimentsdescribed herein are merely used to explain the disclosure, but are notintended to limit the disclosure.

In the disclosure, unless otherwise explicitly specified or defined, theterms such as “mount”, “install”, “connect”, “connection”, and “fix”should be understood in a broad sense. For example, the connection maybe a fixed connection, a detachable connection, or an integralconnection; or the connection may be a mechanical connection or anelectrical connection; or the connection may be a direct connection, anindirect connection through an intermediary, or internal communicationbetween two components. A person of ordinary skill in the art mayunderstand specific meanings of the foregoing terms in the disclosureaccording to specific situations. The term “and/or” used in thisspecification includes any and all combinations of one or more relatedlisted items.

Different from the passivated contact structure in the prior art, in thedisclosure, a first doped layer, a passivation layer, and a second dopedlayer are disposed in sequence, the passivation layer is arranged as aporous structure, and a hole region has the first doped layer and/or thesecond doped layer. Therefore, a conductive channel is formed in thehole region of the passivation layer, so that a desirable resistivity ofthe passivation layer is formed. In this way, a thickness of thepassivation layer has a less impact on the resistance, and the controlrequirements for the thickness of the passivation layer are lowered.Thus, more methods are applicable to preparation of the passivationlayer compared with the prior art. The first doped layer is disposedbetween the silicon substrate and the passivation layer to form aseparation electric field capable of enhancing surface electron holes,so that the field passivation effect is enhanced. Since a Fermi level ofthe first doped layer is different from a Fermi level of the siliconsubstrate, the Fermi level of the first doped layer is changed. A solidconcentration of impurities (transition metals) is increased, so that anadditional impurity gettering effect is achieved. In addition, in theporous structure, the second doped layer is connected to the siliconsubstrate through the doped hole region and the first doped layer, sothat the overall resistance of the prepared cell is further reduced, andthe conversion efficiency of the cell is improved. In this way, thedifficulty in production and the limitation on the conversion efficiencyas a result of precise requirements for the thickness of theconventional tunneling layer are resolved.

Example 1

An embodiment of the disclosure provides a doped region structure of asolar cell. For ease of description, only parts related to thisembodiment of the disclosure are shown. Referring to FIG. 1 , the dopedregion structure of the solar cell provided in this embodiment of thedisclosure includes:

a first doped layer 11, a passivation layer 12, and a second doped layer13 that are disposed on a silicon substrate 10 in sequence.

The passivation layer 12 is a porous structure having the first dopedlayer 11 and/or the second doped layer 13 in a hole region.

In an embodiment of the disclosure, the silicon substrate 10 has a frontside facing the sun during normal operation and a back side opposite tothe front side. The front side is a light-receiving surface. The backside is opposite to the front side and disposed on an other side of thesilicon substrate 10. That is to say, the front side and the back sideare located on different and opposite sides of the silicon substrate 10.In this embodiment, the silicon substrate 10 is an N-typemonocrystalline silicon wafer. It may be understood that, in otherembodiments, the silicon substrate 10 may also be silicon wafers ofother types, such as a polysilicon wafer, a quasi-monocrystallinesilicon wafer, or the like. The silicon substrate 10 may also bedesigned as a P type. The silicon substrate 10 may be designed accordingto actual use requirements, which is not specifically limited herein.

In an embodiment of the disclosure, the passivation layer 12 ispreferably an oxide layer, a silicon carbide layer, an amorphous siliconlayer, or a combination thereof. In some examples of the disclosure, thepassivation layer 12 may include a single material such as an oxidelayer, a plurality of types of materials such as a combination of anoxide layer and an amorphous silicon layer, or a single material such asa combination of a plurality of amorphous silicon layers each having aspecific refractive index. In addition, the first passivation layer 12may also be a silicon oxynitride layer, a silicon nitride layer, or thelike. It may be understood that, the specific structure of thepassivation layer 12 includes but is not limited to the above. Thepassivation layer 12 may be correspondingly designed according to actualuse requirements, which is not specifically limited herein. Further, athickness of the passivation layer 12 is in a range of 0.5-10 nm. In apreferable embodiment of the disclosure, the thickness of thepassivation layer 12 is in a range of 0.8-2 nm. The thickness of thepassivation layer 12 may be designed as a thickness of a tunneling layerin the prior art or a thickness larger than the thickness of theconventional tunneling layer. The thickness may be designed according toactual use requirements, which is not specifically limited herein.

In a preferable embodiment of the disclosure, specifically, thepassivation layer 12 includes the oxide layer and the silicon carbidelayer. The oxide layer and the silicon carbide layer are arranged insequence from the silicon substrate 10 toward outside. The oxide layeris in contact with the first doped layer 11 located inside, and thesilicon carbide layer is in contact with the second doped layer 13located outside. Further, the oxide layer preferably comprises a siliconoxide layer, an aluminum oxide layer, or a combination thereof.Therefore, the passivation layer 12 may also be a combination of thesilicon oxide layer and the aluminum oxide layer in the oxide layer. Thesilicon carbide layer in the passivation layer 12 includes ahydrogenated silicon carbide layer. Hydrogen in the hydrogenated siliconcarbide layer enters the silicon substrate 10 under a diffusionmechanism and a thermal effect, so that a dangling bond for neutralizingthe back side of the silicon substrate 10 passivates defects of thesilicon substrate 10. Therefore, mitigating dangling bonds in aforbidden band increases the probability that a carrier enters thesecond doped layer 13 through the passivation layer 12.

Further, in an embodiment of the disclosure, the passivation layer 12 isa porous structure. The porous structure may be prepared by means ofadditional chemical corrosion, dry etching, or thermal diffusion impact,or the like. The porous structure is performed according to actual userequirements, which is not specifically limited herein. It should benoted that, the porous structure is in a top view of the passivationlayer 12. In a cross-sectional view of the passivation layer 12, amulti-channel structure is shown. The porous structure has holesextending through the passivation layer 12. The porous structure alsohas grooves/openings not extending through the passivation layer 12 on asurface of the passivation layer 12. A pore size of the porous structureis less than 20 μm. Specifically, an average pore size of the holes isless than 20 μm, or pore sizes of 90% of all of the holes are less than20 μm. Further, the pore size of the porous structure is less than 10μm. Further, the pore size of the porous structure is less than 1000 nm.In this case, a hole is designed as a nano-level hole having a pore sizeless than 1000 nm, and a surface hole density may be designed up to10⁶-10⁸/cm². It may be understood that the arrangement of nano-levelhole having the pore size less than 1000 nm greatly reduces the overallcontact area between the second doped layer and the silicon substrate,thereby not only reducing the resistance, but also greatly reducing therecombination. A ratio of an area of the hole region of the porousstructure to an entire area of the porous structure is less than 20%,that is, the holes are sparsely distributed on the passivation layer 12.

In an embodiment of the disclosure, the hole region of the porousstructure includes the first doped layer 11 and/or the second dopedlayer 13. That is to say, the hole region may be inlaid with the firstdoped layer 11 or the second doped layer 13 alone, or may be inlaid witha mixture of the first doped layer 11 and the second doped layer 13. Itneeds to be noted that, in an actual production and preparation process,a part of the hole region of the porous structure may include the firstdoped layer 11 and/or the second doped layer 13, and other parts thatare not filled with the first doped layer 11 and/or the second dopedlayer 13 are gap regions. It needs to be further noted that, in additionto the first doped layer 11 and/or the second doped layer 13 filled inthe hole region, impurities (such as hydrogen, oxygen, and various metalelements) formed in a thermal process (the production of solar cells mayinclude a plurality of high temperature processes according to differentprocesses) or generated during segregation are allowed to exist in thehole region.

Further, in an embodiment of the disclosure, a non-hole region of theporous structure includes a dopant having a same doping type as thefirst doped layer 11 and/or the second doped layer 13. For example, whenthe first doped layer 11 and the second doped layer 13 are N-type dopedlayers (such as a phosphorus doped layer), the non-hole region of thepassivation layer 12 includes a diffused N-type dopant.

In an embodiment of the disclosure, the first doped layer 11 is locatedbetween the silicon substrate 10 and the passivation layer 12. The firstdoped layer 11 may be a doped layer directly formed on the siliconsubstrate 10 by means of ion implantation or the like. In this case, thefirst doped layer 11 is located on the silicon substrate 10.Correspondingly, the passivation layer 12 is prepared on the first dopedlayer 11. The first doped layer 11 may also be a doped layer formed onthe silicon substrate 10 after a doping source directly penetrates thepassivation layer 12 or the holes in the porous structure duringpreparation of the second doped layer 13. In this case, the first dopedlayer 11 is located in the silicon substrate 10. Correspondingly, thepassivation layer 12 is directly prepared on the silicon substrate 10.Therefore, during the preparation of the second doped layer 13, thepassivation layer is thermally diffused into the silicon substrate 10,so that a part of the silicon substrate 10 is transformed into the firstdoped layer 11 through diffusion. A doping concentration of the firstdoped layer 11 is between a doping concentration of the siliconsubstrate 10 and a doping concentration of the second doped layer 13. Ina preferred embodiment of the disclosure, the first doped layer 11 andthe second doped layer 13 have a same doping polarity. For example, whenthe second doped layer 13 is an N-type doped layer, the first dopedlayer 11 is correspondingly preferably an N-type doped layer. It needsto be noted that, the doping polarities of the first doped layer 11 andthe second doped layer 13 may be different from a doping polarity of thesilicon substrate 10. For example, in this embodiment, the siliconsubstrate 10 is an N-type monocrystalline silicon, and the first dopedlayer 11 and the second doped layer 13 may be P-type doped layers.

Preferably, a material of the first doped layer 11 is preferablydesigned as same as the silicon substrate 10. That is to say, when thesilicon substrate 10 is a monocrystalline silicon wafer, the first dopedlayer 11 is also preferably designed as the monocrystalline siliconwafer. The first doped layer 11 is a monocrystalline silicon doped layerdoped with a group-III or group-V element. When the second doped layer13 is the N-type doped layer, the first doped layer 11 is amonocrystalline silicon doped layer doped with group-V elements such asnitrogen, phosphorus, and arsenic. When the second doped layer 13 is theP-type doped layer, the first doped layer 11 is a monocrystallinesilicon doped layer doped with group-III elements such as boron,aluminum, and gallium. It may be understood that, when the siliconsubstrate 10 is designed as silicon wafers of other types, the firstdoped layer 11 may also be correspondingly designed as doped siliconwafers of other types doped with a group-III or group-V element.

Further, in an embodiment of the disclosure, the first doped layer 11 isin a discrete or continuous distribution. The first doped layer may becompletely continuously disposed between the silicon substrate 10 andthe passivation layer 12, or locally discretely distributed near eachhole region of the passivation layer 12. The distribution of the firstdoped layer 11 may be controlled by using a doping process. A dopingamount increases over a doping time, so that the first doped layer 11 ismore continuous, until the first doped layer 11 fully covering thesilicon substrate 10 is formed thereon. Further, a junction depth of thefirst doped layer 11 is less than 1.5 μm.

In an embodiment of the disclosure, the second doped layer 13 includes apolysilicon doped layer, a silicon carbide doped layer, or an amorphoussilicon doped layer. The silicon carbide doped layer in the second dopedlayer 13 comprises at least one silicon carbide doped film each having aspecific refractive index. The refractive indexes of the silicon carbidedoped films decrease from the silicon substrate 10 toward the outside.It needs to be noted that, thicknesses and the refractive indexes of thesilicon carbide doped films may be designed according to actual userequirements, provided that the refractive indexes decrease from thesilicon substrate 10 toward the outside, which are not specificallylimited herein. Since silicon carbide has a wide optical band gap and alow absorption coefficient, parasitic absorption can be reduced, and ashort-circuit current density can be effectively increased. Further, thesilicon carbide doped layer in the second doped layer 13 includes ahydrogenated silicon carbide doped layer. A conductivity of thehydrogenated silicon carbide doped layer is greater than 0.01 S·cm, anda thickness of the hydrogenated silicon carbide doped layer is greaterthan 10 nm. Correspondingly, the conductivity and the thickness may alsobe set to other values, provided that a requirement for the of thesecond doped layer 13 can be met by controlling the conductivity and thethickness of the hydrogenated silicon carbide doped layer, which are notspecifically limited herein. It needs to be noted that, the first dopedlayer 11 and the second doped layer 13 may have a same material ordifferent materials. For example, the first doped layer 11 and thesecond doped layer 13 both include doped polysilicon. Alternatively, thefirst doped layer 11 may include doped monocrystalline silicon, and thesecond doped layer 13 may include doped silicon carbide.

Different from the passivated contact structure in the prior art, inthis embodiment, the first doped layer, the passivation layer, and thesecond doped layer are disposed in sequence, the passivation layer isarranged as a porous structure, and the hole region has the first dopedlayer and/or the second doped layer. Therefore, a conductive channel isformed in the hole region of the passivation layer, so that a desirableresistivity of the passivation layer is formed. In this way, a thicknessof the passivation layer has a less impact on the resistance, and thecontrol requirements for the thickness of the passivation layer arelowered. Thus, more methods are applicable to preparation of thepassivation layer compared with the prior art. The first doped layer isdisposed between the silicon substrate and the passivation layer to forma separation electric field capable of enhancing surface electron holes,so that the field passivation effect is enhanced. Since a Fermi level ofthe first doped layer is different from a Fermi level of the siliconsubstrate, the Fermi level of the first doped layer is changed. A solidconcentration of impurities (transition metals) is increased, so that anadditional impurity absorption effect is achieved. In addition, in theporous structure, the second doped layer is connected to the siliconsubstrate through the doped hole region and the first doped layer, sothat the overall resistance of the prepared cell is further reduced, andthe conversion efficiency of the cell is improved. In this way, thedifficulty in production and the limitation on the conversion efficiencyas a result of precise requirements for the thickness of theconventional tunneling layer are resolved.

Example 2

A second embodiment of the disclosure provides a solar cell. For ease ofdescription, only parts related to this embodiment of the disclosure areshown. Referring to FIG. 2 to FIG. 8 , the solar cell provided in thisembodiment of the disclosure includes:

a silicon substrate 10;

a first doped region 20 and a second doped region 30, alternatelydisposed on a back side of the silicon substrate 10 and having oppositepolarities;

a first dielectric layer 40, disposed on a front side of the siliconsubstrate 10;

a second dielectric layer 50, disposed between the first doped region 20and the second doped region 30; and

a first conductive layer 60 and a second conductive layer 70,respectively disposed in the first doped region 20 and the second dopedregion 30.

The first doped region 20 and/or the second doped region 30 use(s) thedoped region structure described in the above embodiments.

Thus, in an embodiment of the disclosure, the first doped region 20 andthe second doped region 30 in the solar cell both may use the dopedregion structure described in the above embodiments. Referring to FIG. 2, FIG. 4 , and FIG. 6 , since the first doped region 20 and the seconddoped region 30 have opposite polarities, a first doped layer and asecond doped layer in the first doped region 20 and a first doped layerand a second doped layer in the second doped region 30 also haveopposite polarities. For example, when the first doped layer and thesecond doped layer in the first doped region 20 are P-type doped layers,the first doped layer and the second doped layer in the second dopedregion 30 are N-type doped layers having opposite doping polarities. Inthis case, the first doped region 20 is a P-type doped region, and thesecond doped region 30 is an N-type doped region. Definitely, the firstdoped region 20 may also be the N-type doped region, and the seconddoped region 30 may also be the P-type doped region. Therefore, when oneof the first doped region 20 and the second doped region 30 is theP-type doped region, the other of the first doped region and the seconddoped region is the N-type doped region.

Definitely, alternatively, one of the first doped region 20 and thesecond doped region 30 in the solar cell uses the doped region structuredescribed in the above embodiments, and the other of the first dopedregion and the second doped region uses a conventional structure (suchas a passivated contact structure or a diffusion structure). In thisembodiment, preferably, the other one is a third doped layer disposed inthe back side of the silicon substrate 10. That is to say, the other oneuses the conventional diffusion structure, as shown in FIG. 3 , FIG. 5 ,FIG. 7 , and FIG. 8 . Definitely, optionally, the other one may also usethe conventional passivated contact structure. The passivated contactstructure includes a tunneling layer and a doped region (not shown inthe figure). It needs to be noted that, the third doped layer is also amonocrystalline silicon doped layer doped with a group-III or group-Velement. For a specific structure of the third doped layer, refer to thedescription of the first doped layer in the above embodiments. It needsto be further noted that, since the first doped region 20 and the seconddoped region 30 have opposite polarities, and the first doped layer andthe second doped layer have the same doping polarity, the first dopedlayer and the third doped layer are respectively doped with an elementof a different group. That is to say, when the first doped layer isdoped with a group-III element, the third doped layer is doped with agroup-V element. When the first doped layer is doped with a group-Velement, the third doped layer is doped with a group-III element.

When the first doped region 20 and the second doped region 30 both usethe doped region structure described in the above embodiments, amaterial and a thickness selected for each layer structure in the firstdoped region 20 may be same as or different from those selected for eachlayer structure in the second doped region 30. For example, when apassivation layer in the first doped region 20 is specifically selectedas a silicon oxide layer and a silicon carbide layer, a passivationlayer in the second doped region 30 may be selected to be the same asthe passivation layer in the first doped region 20, or may be selectedas a material different from the passivation layer in the first dopedregion 20, such as an aluminum oxide layer and a silicon carbide layer.

A thickness of the passivation layer in the first doped region 20 may bedesigned same as or different from a thickness of the passivation layerin the second doped region 30. Preferably, regardless of whether thematerial of the passivation layer in the first doped region 20 is thesame as the material of the passivation layer in the second doped region30, the thickness of the passivation layer corresponding to the firstdoped layer doped with the group-III element is designed to be larger,and the thickness of the passivation layer corresponding to the firstdoped layer doped with the group-V element is designed to be smaller.That is to say, the thickness of the passivation layer in the P-typedoped region is greater than the thickness of the passivation layer inthe N-type doped region. A main reason lies in that the P-type dopedregion requires a process such as boron doping and a higher temperature,and requires a thicker passivation layer due to a requirement for aplurality of heat treatment processes. In this embodiment, the materialand the thickness of each layer structure in the first doped region 20and in the second doped region 30 are correspondingly designed accordingto actual use requirements, which are not specifically limited herein.

In addition, in a preferred embodiment of the disclosure, a hole densityof the passivation layer in the P-type doped region is greater than ahole density of the passivation layer in the N-type doped region. Thehole density means a quantity of holes per unit area. That is to say, ina same unit area, the passivation layer in the P-type doped region hasmore holes than the passivation layer in the N-type doped region. A mainreason lies in that a conductivity of the P-type doped region isrelatively poor, and the thickness of the passivation layer in the Ptype doped region is relatively large. Therefore, more holes arerequired to enhance the conductivity.

In an embodiment of the disclosure, the first dielectric layer 40 andthe second dielectric layer 50 each are an aluminum oxide layer, asilicon nitride layer, a silicon oxynitride layer, a silicon carbidelayer, an amorphous silicon layer, a silicon oxide layer, or acombination thereof. The first dielectric layer 40 and the seconddielectric layer 50 achieve a passivation effect. The first dielectriclayer 40 and the second dielectric layer 50 each are designed as astructure having at least one layer. Refractive indexes of the firstdielectric layer and the second dielectric layer decrease from thesilicon substrate 10 toward the outside, so that a film layer close tothe silicon substrate 10 achieves the passivation effect, and a filmlayer away from the silicon substrate 10 achieves an antireflectioneffect, thereby enhancing the antireflection effect. In this way, thesilicon substrate 10 absorbs and uses light more effectively, and theshort-circuit current density is increased. Each film layer in the firstdielectric layer 40 and in the second dielectric layer 50 that has adifferent structure comprises a plurality of films each having aspecific refractive index. According to the above, the film layers arearranged such that the refractive indexes of the film layers decreasefrom the silicon substrate 10 toward the outside. For example, thesilicon oxide layer in the first dielectric layer 40 comprises aplurality of silicon oxide films having refractive indexes decreasingfrom the silicon substrate 10 toward the outside.

It should be noted that, the first dielectric layer 40 and the seconddielectric layer 50 may have a same structural arrangement or differentstructural arrangements. The film layer structures in the firstdielectric layer 40 and in the second dielectric layer 50 may becorrespondingly designed according to actual use requirements, which arenot specifically limited herein. Preferably, the first dielectric layer40 and the second dielectric layer 50 are designed same, so that thefirst dielectric layer 40 and the second dielectric layer 50 may beprepared on the front side and the back side of the silicon substrate 10respectively by using a same process.

In a preferred embodiment of the disclosure, the first dielectric layer40 and/or the second dielectric layer 50 include/includes a double-layerstructure of an aluminum oxide layer and a silicon carbide layer or adouble-layer structure of a silicon oxide layer and a silicon carbidelayer. In this case, an entire thickness of the first dielectric layer40 is greater than 50 nm, and an entire thickness of the seconddielectric layer 50 is greater than 25 nm. It may be understood that,the specific structural arrangements of the first dielectric layer 40and the second dielectric layer 50 include but are not limited to thespecific examples listed above.

Further, in an embodiment of the disclosure, a thickness of the aluminumoxide layer or the silicon oxide layer in the first dielectric layer 40is less than 40 nm. A thickness of the aluminum oxide layer or thesilicon oxide layer in the second dielectric layer 50 is less than 25nm. A thickness of the silicon carbide layer in the first dielectriclayer 40 and/or in the second dielectric layer 50 is greater than 10 nm.The silicon carbide layer in the first dielectric layer 40 and/or in thesecond dielectric layer 50 can not only provide a hydrogen passivationeffect, but also reduce parasitic light absorption by virtue of a largeoptical band gap and a small absorption coefficient.

It needs to be noted that, the multi-layer structure in this embodimentof the disclosure conforms to an arrangement sequence from the siliconsubstrate 10 toward the outside. For example, when the above firstdielectric layer 40 includes the aluminum oxide layer and the siliconcarbide layer, the aluminum oxide layer is close to the siliconsubstrate 10, and the silicon carbide layer is close to the outside. Itneeds to be further noted that, in the drawings, FIG. 2 to FIG. 8 onlyshow the first dielectric layer 40 and the second dielectric layer 50 asdouble-layer structures. However, it may be understood that, the firstdielectric layer 40 and the second dielectric layer 50 may also includeother quantities of layers. Respective specific structures may bedesigned according to actual needs, and are not completely limited tothe drawings. It needs to be further noted that, each drawing of thedisclosure is merely used to describe the specific structuraldistribution in the solar cell, but does not correspond to an actualsize of each structure. The drawings do not completely correspond tospecific actual sizes in this embodiment, and the actual size of eachstructure needs to conform to specific parameters provided in thisembodiment.

Further, the silicon carbide layer in the first dielectric layer 40and/or in the second dielectric layer 50 comprises at least one siliconcarbide film. The refractive indexes of the silicon carbide filmsdecrease from the silicon substrate 10 toward the outside. Optionally,the refractive indexes of the above material may be generally selectedas follows: the refractive index of monocrystalline silicon is 3.88, therefractive index of amorphous silicon is in a range of 3.5-4.2, therefractive index of polysilicon is 3.93, the refractive index of siliconcarbide is in a range of 2-3.88, the refractive index of silicon nitrideis in a range of 1.9-3.88, the refractive index of silicon oxynitride isin a range of 1.45-3.88, the refractive index of silicon oxide is 1.45,and the refractive index of aluminum oxide is 1.63. It may be understoodthat, the refractive indexes of the above materials may also be set toother values according to actual use requirements, which are notspecifically limited herein.

Further, in an embodiment of the disclosure, a magnesium fluoride layeris further disposed outside the first dielectric layer 40 and/or thesecond dielectric layer 50. That is to say, in addition to one or acombination of more of the aluminum oxide layer, the silicon nitridelayer, the silicon oxynitride layer, the silicon carbide layer, theamorphous silicon layer, and the silicon oxide layer selected for thefirst dielectric layer 40 and the second dielectric layer 50, amagnesium fluoride layer may be further disposed outside the firstdielectric layer 40 and/or the second dielectric layer 50. The magnesiumfluoride layer is required to have a lowest refractive index. Generally,the refractive index is set to 1.4. The magnesium fluoride layer has anoptical effect of enhancing antireflection.

Further, in an embodiment of the disclosure, an electric field layer ora floating junction is disposed between the front side of the siliconsubstrate 10 and the first dielectric layer 40. Specifically, theelectric field layer is prepared by means of phosphorus diffusion on thesilicon substrate 10, or the floating junction is prepared by means ofboron diffusion. The electric field layer or the floating junction isused as a front surface electric field of the solar cell.

In an embodiment of the disclosure, the first conductive layer 60 and/orthe second conductive layer 70 are/is a TCO transparent conductive filmand/or a metal electrode. The metal electrode includes a silverelectrode, a copper electrode, an aluminum electrode, a tin-coatedcopper electrode, or a silver-coated copper electrode. Further, thecopper electrode is electroplated copper prepared by using anelectroplating process or the copper electrode prepared by means ofphysical vapor deposition. A nickel electrode, a chromium electrode, atitanium electrode, or a tungsten electrode is used as a seed layer or aprotective layer of the electroplated copper. It needs to be noted that,the first conductive layer 60 and the second conductive layer 70 mayselect a same electrode or different electrodes. For example, the firstconductive layer 60 and the second conductive layer 70 both select thealuminum electrode. Alternatively, the first conductive layer 60 selectsthe silver electrode, and the second conductive layer 70 selects thealuminum electrode.

Further, in an embodiment of the disclosure, a texturing process isfurther performed before the first dielectric layer 40 is prepared onthe front side of the silicon substrate 10. A shape formed on the frontside includes but is not limited to an alkali polished surface, amechanically polished surface, a random pyramid shape, an invertedpyramid shape, a spherical cap shape, a V-shaped groove, and a shaperanging among the above shapes. The surface shape formed on the frontside of the silicon substrate 10 helps reduce the reflection of sunlighton the front side, thereby improving the conversion efficiency of thesolar cell.

Further, in an embodiment of the disclosure, the second dielectric layer50 may cover only a region between the first doped region 20 and thesecond doped region 30 on the silicon substrate 10, or may extend tocover the first doped region 20 and/or the second doped region 30. Whenthe second dielectric layer 50 covers only the region between the firstdoped region 20 and the second doped region 30 on the silicon substrate10, the first conductive layer 60 covers an entire back side of thefirst doped region 20 for electric connection, and the second conductivelayer 70 covers an entire back side of the second doped region 30 forelectric connection. When the second dielectric layer 50 extends tocover the first doped region 20 and/or the second doped region 30, thefirst conductive layer 60 covers a back surface of a remaining part thatnot covered by the second dielectric layer 50 in the first doped region20 for achieve electric connection, and the second conductive layer 70covers a back surface of a remaining part not covered by the seconddielectric layer 50 in the second doped region 30 for electricconnection. When the second dielectric layer 50 covers the entire backside, the first conductive layer 60 penetrates the second dielectriclayer 50 through perforations or the like to be electrically connectedto the first doped region 20, and the second conductive layer 70penetrates the second dielectric layer 50 through perforations or thelike to be electrically connected to the second doped region 30. Theconductive polarities of the first conductive layer 60 and the secondconductive layer 70 are determined according to the polarities of thefirst doped region 20 and the second doped region 30, which are notspecifically limited herein.

In an embodiment of the disclosure, referring to FIG. 2 and FIG. 3 , thefirst doped region 20 and the second doped region 30 are alternatelydisposed on the back side of the silicon substrate 10. In order to avoidundesirable phenomena such as electric leakage caused by unobstructedconnection between the first doped region 20 and the second doped region30, a trench is provided between the first doped region 20 and thesecond doped region 30. The trench separates the first doped region 20from the second doped region 30. Correspondingly, the second dielectriclayer 50 covers the trench. It needs to be noted that, a surface shapeof the trench that is in contact with the silicon substrate 10 mayfurther have a rough texture structure disposed thereon. The roughtexture structure is usually formed by means of texturing, and includesbut is not limited to an alkali polished surface, a mechanicallypolished surface, a random pyramid shape, an inverted pyramid shape, aspherical cap shape, a V-shaped groove, and a shape ranging among theabove shapes. An irregular hemispherical texture may be formed by meansof acid texturing, a pyramid-shaped texture may be formed by means ofalkali texturing, or the pyramid-shaped texture may be formed first bymeans of alkali texturing and then smoothing is performed on a top of apyramid-shaped by means of acid texturing. In this way, the surfaceshape formed at the trench on the back side of the silicon substrate 10helps the silicon substrate 10 absorb and reuse light more effectively,and the short-circuit current density is increased, thereby enhancingthe conversion efficiency of the solar cell.

In another embodiment of the disclosure, referring to FIG. 4 and FIG. 5, grooves spaced apart are provided on the back side of the siliconsubstrate 10. The first doped region 20 and the second doped region 30are alternately disposed in the grooves. The grooves may be formed bymeans of laser ablation or by using a combination of a mask (such as ahard mask, a silicon oxide mask, a silicon nitride mask, or aphotoresist mask) and wet/dry etching. By means of the grooves spacedapart on the back side of the silicon substrate 10, a region between twoadjacent grooves of the silicon substrate 10 is generally formed into aprotrusion shape. Therefore, the blocking between the first doped region20 and the second doped region 30 disposed in the grooves can berealized by the protrusion structure between the grooves of the siliconsubstrate 10. Definitely, optionally, a trench may be further disposedbetween the first doped region 20 and the second doped region 30. Inthis case, a trench may be provided in the protrusion structure or thegroove, so that double isolation between the first doped region 20 andthe second doped region 30 can be realized by the protrusion structurebetween the grooves of the silicon substrate 10 and the trenchstructure.

The first doped region 20 and the second doped region 30 include atleast the doped region structure described in the above embodiments. Itneeds to be noted that, the passivation layer in the doped regionstructure may cover only a bottom wall of the grooves, or may extend tocover sidewalls of the groove. Preferably, the passivation layer coversthe bottom wall and the sidewalls of the groove. In this case, the firstdoped layer is correspondingly disposed on the bottom wall and thesidewalls of the groove. Therefore, carriers generated on the siliconsubstrate 10 are easily separated by using the passivation layer on thesidewalls of the groove and selectively collected in the correspondingsecond doped layer. In this way, multidimensional collection of thecarriers in the bottom wall and the sidewalls of the groove can berealized. It needs to be noted that, the first doped region 20 and thesecond doped region 30 may be respectively disposed in partial regionsin the corresponding grooves.

Further, in an embodiment of the disclosure, the groove is in a circulararc shape, a trapezoidal shape, or a square shape. The groove ispreferably designed as the circular arc shape or the trapezoidal shape.When the groove is designed as the circular arc shape or the trapezoidalshape, inner walls of the groove can reflect light more desirably, and asurface area of the passivation layer of the doped region structure thatis contact with the first doped layer can be further increased.Definitely, when the groove is designed as the square shape, an actualproduction process is much simpler. It needs to be further noted that,the grooves may have a same shape or different shapes. For example, thegroove of the first doped region 20 and the groove of the second dopedregion 30 are designed as the square shape, or the groove of the firstdoped region 20 is designed as the square shape, and the groove of thesecond doped region 30 is designed as the circular arc shape, or thelike. Thus, the shapes of the grooves may be designed according toactual use requirements, which are not specifically limited herein.Further, a width and a depth of each groove may be designed same ordifferently, and may be designed according to actual use requirements,which are not specifically limited herein.

Further, in an embodiment of the disclosure, a total thickness of thefirst doped region 20 and/or a total thickness of the second dopedregion 30 may be greater than, less than, or equal to the depth of thegroove. When the total thickness of the first doped region 20 and/or thetotal thickness of the second doped region 30 are/is less than or equalto the depth of the groove, the first doped region 20 and/or the seconddoped region 30 do/does not extend out of the groove. Therefore, theblocking of the first doped region 20 and/or the second doped region 30is realized directly by the protrusion structure between the grooves.When the total thickness of the first doped region 20 and/or the totalthickness of the second doped region 30 are/is greater than the depth ofthe groove, the first doped region 20 and/or the second doped region 30may extend to protrusion regions among the grooves. That is to say, forexample, the first doped region 20 may extend to a partial or entireregion between the grooves, but does not come into contact with theadjacent second doped region 30.

Further, in an embodiment of the disclosure, the back side of thesilicon substrate 10 in the protrusion regions among the grooves has arough texture structure. The rough texture structure is usually formedby means of texturing, and includes but is not limited to an alkalipolished surface, a mechanically polished surface, a random pyramidshape, an inverted pyramid shape, a spherical cap shape, a V-shapedgroove, and a shape ranging among the above shapes. An irregularhemispherical texture may be formed by means of acid texturing, apyramid-shaped texture may be formed by means of alkali texturing, orthe pyramid-shaped texture may be formed first by means of alkalitexturing and then smoothing is performed on a top of a pyramid-shapedby means of acid texturing. It may be understood that, the rough texturestructure may also be arranged on the entire back side of the siliconsubstrate 10.

In still another embodiment of the disclosure, referring to FIG. 6 ,FIG. 7 , and FIG. 8 , grooves spaced apart are provided on the back sideof the silicon substrate 10. One of the first doped region 20 and thesecond doped region 30 is disposed in one of the grooves, and the otherof the first doped region and the second doped region is disposedoutside the groove. In order to realize the blocking between the firstdoped region 20 and the second doped region 30, a trench may be furtherprovided between the first doped region 20 and the second doped region30. The first doped region 20 is separated from the second doped region30 by the trench, as shown in FIG. 6 and FIG. 7 . The first doped region20 and the second doped region 30 may also be disposed in partialregions inside and outside the groove, so that the silicon substrate 10inside and outside the groove that is not covered by the first dopedregion 20 and the second doped region 30 realizes the separation of thefirst doped region 20 from the second doped region 30, as shown in FIG.8 . Definitely, the non-contact between the first doped region 20 andthe second doped region 30 may also be realized by setting the depth ofthe groove. For other specific descriptions of the groove and the firstdoped region 20 and the second doped region 30 disposed inside andoutside the groove, refer to the above descriptions, and details are notdescribed herein again.

Therefore, in an embodiment of the disclosure, the first doped region 20and the second doped region 30 both may be disposed on the back side ofthe silicon substrate 10, or both may be disposed on the grooves spacedapart on the silicon substrate 10, or may be respectively disposedinside and outside the grooves spaced on the silicon substrate 10. Thefirst doped region 20 and the second doped region 30 include at leastthe doped region structure described in the above embodiments, andinclude a diffusion structure comprising the third doped layer or apassivated contact structure comprising the tunneling layer and thedoped region. Thus, the prepared solar cell may be as follows.

Cell I: The first doped region 20 and the second doped region 30 areboth disposed on the back side of the silicon substrate 10. The firstdoped region 20 and the second doped region 30 have the doped regionstructure described in the above embodiments. A trench is providedbetween the first doped region 20 and the second doped region 30.

Cell II: The first doped region 20 and the second doped region 30 areboth disposed on the back side of the silicon substrate 10. One of thefirst doped region 20 and the second doped region 30 has the dopedregion structure described in the above embodiments, and the other ofthe first doped region and the second doped region has the diffusionstructure comprising the third doped layer. A trench is provided betweenthe first doped region 20 and the second doped region 30.

Cell III: The first doped region 20 and the second doped region 30 areboth disposed on the back side of the silicon substrate 10. One of thefirst doped region 20 and the second doped region 30 has the dopedregion structure described in the above embodiments, and the other ofthe first doped region and the second doped region has the passivatedcontact structure comprising the tunneling layer and the doped region. Atrench is provided between the first doped region 20 and the seconddoped region 30.

Cell IV: The first doped region 20 and the second doped region 30 arealternately disposed in the grooves of the silicon substrate 10. Thefirst doped region 20 and the second doped region 30 both have the dopedregion structure described in the above embodiments.

Cell V: The first doped region 20 and the second doped region 30 arealternately disposed in the grooves of the silicon substrate 10. One ofthe first doped region 20 and the second doped region 30 has the dopedregion structure described in the above embodiments, and the other ofthe first doped region and the second doped region has the diffusionstructure comprising the third doped layer.

Cell VI: The first doped region 20 and the second doped region 30 arealternately disposed in the grooves of the silicon substrate 10. One ofthe first doped region 20 and the second doped region 30 has the dopedregion structure described in the above embodiments, and the other ofthe first doped region and the second doped region has the passivatedcontact structure comprising the tunneling layer and the doped region.

Cell VII: The first doped region 20 is disposed in the groove, and thesecond doped region 30 is disposed on the protrusion. The first dopedregion 20 and the second doped region 30 both have the doped regionstructure described in the above embodiments. A trench may be providedbetween the first doped region 20 and the second doped region 30.

Cell VIII: One of the first doped region 20 and the second doped region30 has the doped region structure described in the above embodiments,and the other of the first doped region and the second doped region hasthe diffusion structure comprising the third doped layer. The dopedregion structure is disposed on the protrusion, and the diffusionstructure is disposed in the groove. A trench may be provided betweenthe first doped region 20 and the second doped region 30.

Cell IX: One of the first doped region 20 and the second doped region 30has the doped region structure described in the above embodiments, andthe other of the first doped region and the second doped region has thediffusion structure comprising the third doped layer. The doped regionstructure is disposed in the groove, and the diffusion structure isdisposed on the protrusion. A trench may be provided between the firstdoped region 20 and the second doped region 30.

Cell X: One of the first doped region 20 and the second doped region 30has the doped region structure described in the above embodiments, andthe other of the first doped region and the second doped region has thepassivated contact structure comprising the tunneling layer and thedoped region. The doped region structure is disposed on the protrusion,and the passivated contact structure is disposed in the groove. A trenchmay be provided between the first doped region 20 and the second dopedregion 30.

Cell XI: One of the first doped region 20 and the second doped region 30has the doped region structure described in the above embodiments, andthe other of the first doped region and the second doped region has thepassivated contact structure comprising the tunneling layer and thedoped region. The doped region structure is disposed in the groove, andthe passivated contact structure is disposed on the protrusion. A trenchmay be provided between the first doped region 20 and the second dopedregion 30.

Different from the passivated contact structure in the prior art, inthis embodiment, the doped region structure is disposed, the passivationlayer in the doped region structure is arranged as a porous structure,and the hole region has the first doped layer and/or the second dopedlayer. Therefore, a conductive channel is formed in the hole region ofthe passivation layer, so that a desirable resistivity of thepassivation layer is formed. In this way, a thickness of the passivationlayer has a less impact on the resistance, and the control requirementsfor the thickness of the passivation layer are lowered. Thus, moremethods are applicable to preparation of the passivation layer comparedwith the prior art. The first doped layer is disposed between thesilicon substrate and the passivation layer to form a separationelectric field capable of enhancing surface electron holes, so that thefield passivation effect is enhanced. Since a Fermi level of the firstdoped layer is different from a Fermi level of the silicon substrate,the Fermi level of the first doped layer is changed. A solidconcentration of impurities (transition metals) is increased, so that anadditional impurity gettering effect is formed. In addition, in theporous structure, the second doped layer is connected to the siliconsubstrate through the doped hole region and the first doped layer, sothat the overall resistance of the prepared cell is further reduced, andthe conversion efficiency of the cell is improved. In this way, thedifficulty in production and the limitation on the conversion efficiencyas a result of precise requirements for the thickness of theconventional tunneling layer are resolved.

Example 3

A third embodiment of the disclosure provides a solar cell. For ease ofdescription, only parts related to this embodiment of the disclosure areshown. Referring to FIG. 9 , the solar cell provided in this embodimentof the disclosure includes:

a silicon substrate 10;

the doped region structure 1 described in the above embodiments,disposed on a back side of the silicon substrate 10;

a third dielectric layer 80, disposed on the doped region structure 1;

a fourth doped layer 90 and a fourth dielectric layer 100, disposed on afront side of the silicon substrate 10 in sequence; and

a third conductive layer 110 and a fourth conductive layer 120,respectively electrically connected to the doped region structure 1 andthe fourth doped layer 90.

The doped region structure 1 and the fourth doped layer 90 have oppositepolarities.

The fourth doped layer 90 is a monocrystalline silicon doped layer dopedwith a group-III or group-V element. For details of the fourth dopedlayer, refer to the description of the first doped layer in the dopedregion structure 1 in the above embodiments. It needs to be furthernoted that, since the doped region structure 1 and the fourth dopedlayer 90 have opposite polarities, the first doped layer and the fourthdoped layer 90 are respectively doped with an element of a differentgroup. That is to say, when the first doped layer is doped with agroup-III element, the fourth doped layer 90 is doped with a group-Velement. When the first doped layer is doped with a group-V element, thefourth doped layer 90 is doped with a group-III element.

In an embodiment of the disclosure, the third dielectric layer 80 andthe fourth dielectric layer 100 each are an aluminum oxide layer, asilicon nitride layer, a silicon oxynitride layer, a silicon carbidelayer, an amorphous silicon layer, a silicon oxide layer, or acombination thereof. The third dielectric layer 80 and the fourthdielectric layer 100 achieve a passivation effect. The third dielectriclayer 80 and the fourth dielectric layer 100 each are designed as astructure having at least one layer. Refractive indexes of the thirddielectric layer and the fourth dielectric layer decrease from thesilicon substrate 10 toward the outside, so that a film layer close tothe silicon substrate 10 achieves the passivation effect, and a filmlayer away from the silicon substrate 10 achieves an antireflectioneffect, thereby enhancing the antireflection effect. In this way, thesilicon substrate 10 absorbs and uses light more effectively, and theshort-circuit current density is increased. Each film layer in the thirddielectric layer 80 and in the fourth dielectric layer 100 that has adifferent structure comprises a plurality of films each having aspecific refractive index. According to the above, the film layers arearranged such that the refractive indexes of the film layers decreasefrom the silicon substrate 10 toward the outside. For example, thesilicon oxide layer in the third dielectric layer 80 comprises aplurality of silicon oxide films having refractive indexes decreasingfrom the silicon substrate 10 toward the outside.

It should be noted that, the third dielectric layer 80 and the fourthdielectric layer 100 may have a same structural arrangement or differentstructural arrangements. The film layer structures in the thirddielectric layer 80 and the fourth dielectric layer 100 may becorrespondingly designed according to actual use requirements, which arenot specifically limited herein. Preferably, the third dielectric layer80 and the fourth dielectric layer 100 are designed same, so that thefourth dielectric layer 100 and the third dielectric layer 80 may beprepared on the front side and the back side of the silicon substrate 10respectively by using a same process.

In a preferred embodiment of the disclosure, the third dielectric layer80 and/or the fourth dielectric layer 100 include/includes adouble-layer structure of an aluminum oxide layer and a silicon carbidelayer or a double-layer structure of a silicon oxide layer and a siliconcarbide layer. An entire thickness of the third dielectric layer 80 isgreater than 25 nm, and an entire thickness of the fourth dielectriclayer 100 is greater than 50 nm. It may be understood that, the specificstructural arrangements of the third dielectric layer 80 and the fourthdielectric layer 100 include but are not limited to the specificexamples listed above.

Further, in an embodiment of the disclosure, a thickness of the aluminumoxide layer or the silicon oxide layer in the third dielectric layer 80is less than 25 nm. A thickness of the aluminum oxide layer or thesilicon oxide layer in the fourth dielectric layer 100 is less than 40nm. A thickness of the silicon carbide layer in the third dielectriclayer 80 and/or in the fourth dielectric layer 100 is greater than 10nm. The silicon carbide layer in the third dielectric layer 80 and/or inthe fourth dielectric layer 100 can not only provide a hydrogenpassivation effect, but also reduce parasitic light absorption by virtueof a large optical band gap and a small absorption coefficient.

It needs to be noted that, the multi-layer structure in this embodimentof the disclosure conforms to an arrangement sequence from the siliconsubstrate 10 toward the outside. For example, when the above thirddielectric layer 80 includes the aluminum oxide layer and the siliconcarbide layer, the aluminum oxide layer is close to the siliconsubstrate 10, and the silicon carbide layer is close to the outside. Itneeds to be further noted that, in the drawings, FIG. 9 only shows thethird dielectric layer 80 and the fourth dielectric layer 100 asdouble-layer structures. However, it may be understood that, the thirddielectric layer 80 and the fourth dielectric layer 100 may also includeother quantities of layers. Respective specific structures may bedesigned according to actual needs, and are not completely limited tothe drawings. It needs to be further noted that, each drawing of thedisclosure is merely used to describe the specific structuraldistribution in the solar cell, but does not correspond to an actualsize of each structure. The drawings do not completely correspond tospecific actual sizes in this embodiment, and the actual size of eachstructure needs to conform to specific parameters provided in thisembodiment.

Further, the silicon carbide layer in the third dielectric layer 80and/or in the fourth dielectric layer 100 comprises at least one siliconcarbide film. The refractive indexes of the silicon carbide filmsdecrease from the silicon substrate 10 toward the outside. Optionally,the refractive indexes of the above material may be generally selectedas follows: the refractive index of monocrystalline silicon is 3.88, therefractive index of amorphous silicon is in a range of 3.5-4.2, therefractive index of polysilicon is 3.93, the refractive index of siliconcarbide is in a range of 2-3.88, the refractive index of silicon nitrideis in a range of 1.9-3.88, the refractive index of silicon oxynitride isin a range of 1.45-3.88, the refractive index of silicon oxide is 1.45,and the refractive index of aluminum oxide is 1.63. It may be understoodthat, the refractive indexes of the above materials may also be set toother values according to actual use requirements, which are notspecifically limited herein.

Further, in an embodiment of the disclosure, a magnesium fluoride layeris further disposed outside the third dielectric layer 80 and/or thefourth dielectric layer 100. That is to say, in addition to one or acombination of more of the aluminum oxide layer, the silicon nitridelayer, the silicon oxynitride layer, the silicon carbide layer, theamorphous silicon layer, and the silicon oxide layer selected for thethird dielectric layer 80 and the fourth dielectric layer 100, amagnesium fluoride layer may be further disposed outside the thirddielectric layer 80 and/or the fourth dielectric layer 100. Themagnesium fluoride layer is required to have a lowest refractive index.Generally, the refractive index is set to 1.4. The magnesium fluoridelayer has an optical effect of enhancing antireflection.

In an embodiment of the disclosure, the third conductive layer 110and/or the fourth conductive layer 120 are/is a TCO transparentconductive film and/or a metal electrode. The metal electrode includes asilver electrode, a copper electrode, an aluminum electrode, atin-coated copper electrode, or a silver-coated copper electrode.Further, the copper electrode is electroplated copper prepared by usingan electroplating process or the copper electrode prepared by means ofphysical vapor deposition. A nickel electrode, a chromium electrode, atitanium electrode, or a tungsten electrode is used as a seed layer or aprotective layer of the electroplated copper. It needs to be noted that,the third conductive layer 110 and the fourth conductive layer 120 mayselect a same material or different materials. For example, the thirdconductive layer 110 and the fourth conductive layer 120 both select thealuminum electrode, or the third conductive layer 110 selects the silverelectrode, and the fourth conductive layer 120 selects the aluminumelectrode. Further, the third conductive layer 110 penetrates the thirddielectric layer 80 through perforations or the like to be electricallyconnected to the doped region structure 1. The fourth conductive layer120 penetrates the fourth dielectric layer 100 through perforations orthe like to be electrically connected to the fourth doped layer 90. Theconductive polarities of the third conductive layer 110 and the fourthconductive layer 120 are determined according to the polarities of thedoped region structure 1 and the fourth doped layer 90, which are notspecifically limited herein.

Further, in an embodiment of the disclosure, a texturing process isfurther performed before the fourth dielectric layer 100 is prepared onthe front side of the silicon substrate 10. A shape formed on the frontside is not limited to an alkali polished surface, a mechanicallypolished surface, a random pyramid shape, an inverted pyramid shape, aspherical cap shape, a V-shaped groove, and a shape ranging among theabove shapes. The surface shape formed on the front side of the siliconsubstrate 10 helps reduce the reflection of sunlight on the front side,thereby improving the conversion efficiency of the solar cell.

Different from the passivated contact structure in the prior art, inthis embodiment, the doped region structure is disposed, the passivationlayer in the doped region structure is arranged as a porous structure,and the hole region has the first doped layer and/or the second dopedlayer. Therefore, a conductive channel is formed in the hole region ofthe passivation layer, so that a desirable resistivity of thepassivation layer is formed. In this way, a thickness of the passivationlayer has a less impact on the resistance, and the control requirementsfor the thickness of the passivation layer are lowered. Thus, moremethods are applicable to preparation of the passivation layer comparedwith the prior art. The first doped layer is disposed between thesilicon substrate and the passivation layer to form a separationelectric field capable of enhancing surface electron holes, so that thefield passivation effect is enhanced. Since a Fermi level of the firstdoped layer is different from a Fermi level of the silicon substrate,the Fermi level of the first doped layer is changed. A solidconcentration of impurities (transition metals) is increased, so that anadditional impurity gettering effect is formed. In addition, in theporous structure, the second doped layer is connected to the siliconsubstrate through the doped hole region and the first doped layer, sothat the overall resistance of the prepared cell is further reduced, andthe conversion efficiency of the cell is improved. In this way, thedifficulty in production and the limitation on the conversion efficiencyas a result of precise requirements for the thickness of theconventional tunneling layer are resolved.

Example 4

A fourth embodiment of the disclosure further provides a cell assembly.The cell assembly includes the solar cell described in Example 2.

Example 5

A fifth embodiment of the disclosure further provides a photovoltaicsystem. The photovoltaic system includes the cell assembly described inExample 4.

Example 6

A sixth embodiment of the disclosure further provides a cell assembly.The cell assembly includes the solar cell described in Example 3.

Example 7

A seventh embodiment of the disclosure further provides a photovoltaicsystem. The photovoltaic system includes the cell assembly described inExample 6.

It will be obvious to those skilled in the art that changes andmodifications may be made, and therefore, the aim in the appended claimsis to cover all such changes and modifications.

The invention claimed is:
 1. A solar cell, comprising: a doped regionstructure comprising a first doped layer, a passivation layer, and asecond doped layer that are adapted to be disposed on a siliconsubstrate of the solar cell in sequence; wherein: the passivation layeris a porous structure comprising a hole region, and the first dopedlayer and/or the second doped layer are disposed in the hole region; thesecond doped layer is adapted to be connected to the silicon substratethrough the hole region and the first doped layer; and a dopingconcentration of the first doped layer is between a doping concentrationof the silicon substrate and a doping concentration of the second dopedlayer; a silicon substrate; a first doped region and a second dopedregion, disposed on a back side of the silicon substrate and havingopposite polarities; a first dielectric layer, disposed on a front sideof the silicon substrate; a second dielectric layer, disposed betweenthe first doped region and the second doped region; and a firstconductive layer and a second conductive layer, respectively disposed inthe first doped region and the second doped region; wherein: each of thefirst doped region and the second doped region is the doped regionstructure; and one of the first doped region and the second doped regionis a P-type doped region, and the other of the first doped region andthe second doped region is an N-type doped region; and a thickness ofthe passivation layer in the P-type doped region is greater than athickness of the passivation layer in the N-type doped region.
 2. Thesolar cell according to claim 1, wherein one of the first doped regionand the second doped region uses the doped region structure, and theother of the first doped region and the second doped region is a thirddoped layer disposed on the back side of the silicon substrate.
 3. Thesolar cell according to claim 1, wherein grooves spaced apart areprovided on the back side of the silicon substrate, and the first dopedregion and the second doped region are disposed in the grooves.
 4. Thesolar cell according to claim 1, wherein grooves spaced apart areprovided on the back side of the silicon substrate; one of the firstdoped region and the second doped region is disposed in one of thegrooves, and the other of the first doped region and the second dopedregion is disposed outside the grooves.
 5. The solar cell according toclaim 1, wherein a trench is provided between the first doped region andthe second doped region.
 6. The solar cell according to claim 4, whereinthe first doped region and/or the second doped region are/is disposed ina part of regions inside and outside the grooves.
 7. The solar cellaccording to claim 1, wherein the first dielectric layer and the seconddielectric layer each are an aluminum oxide layer, a silicon nitridelayer, a silicon oxynitride layer, a silicon carbide layer, an amorphoussilicon layer, a silicon oxide layer, or a combination thereof.
 8. Thesolar cell according to claim 7, wherein the first dielectric layerand/or the second dielectric layer comprise(s) the aluminum oxide layerand the silicon carbide layer, or the silicon oxide layer and siliconcarbide layer; and a thickness of the first dielectric layer is greaterthan 50 nm, and a thickness of the second dielectric layer is greaterthan 25 nm.
 9. The solar cell according to claim 8, wherein the siliconcarbide layer in the first dielectric layer and/or in the seconddielectric layer comprises at least one silicon carbide film; andrefractive indexes of silicon carbide films decrease from the siliconsubstrate toward outside.
 10. The solar cell according to claim 1,wherein the first conductive layer and the second conductive layer aretransparent conductive oxide layer (TCO) transparent conductive filmsand/or metal electrodes.
 11. The solar cell according to claim 1,wherein an electric field layer or a floating junction is disposedbetween the front side of the silicon substrate and the first dielectriclayer.
 12. The solar cell according to claim 1, wherein a hole densityof the passivation layer in the P-type doped region is greater than ahole density of the passivation layer in the N-type doped region.
 13. Aphotovoltaic system, comprising the solar cell according to claim 1.